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Figure 11. Dependence of the on-edge hydrogenic donor binding energy in GaAs-Ga1-xAlxAs quantum wells versus the GaAs slab thickness L. m* = 0.067m0. k = 13.1. V0 = 212 meV (curve 1); 318 meV (curve 2); 424 meV (curve 3); and infinite (curve 4). Reprinted with permission from [205], J. L. Marin et al., in "Handbook of Advanced Electronic and Photonic Materials and Devices" (H. S. Nalwa, Ed.). Academic Press, San Diego, 2001. © 2001, Academic Press.

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