iff 11

Fig. 17.21. AFM scans show resist profiles exposured through a 25 nm|50 nm|10 nm -PMMA|Ag|SiO2 mask stack. Feature fidelity at (a) 1 ^m, (b) 500 nm, (c) 420 nm, (d) 350 nm, (e) 290 nm, and (f) 250 nm periods are shown. Part (g) shows the two-dimensional Fourier transform of (f), confirming the presence of the 250 nm period features

Fig. 17.22. Finite difference time domain (FDTD) simulations for the exposures shown in Fig. 17.20. The ilTimination wavelength is 341 nm in bfflth cases and the spacer material is PMMA

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Brain Blaster

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