Simulations

The resolution achievements of scanning near field optical microscopy of better than X/40 (Betzig 1991) suggest the potential for equivalent resolutions in near field lithography. An understanding of the near field mechanisms responsible for evanescent exposure are required to guide future ENFOL studies and to explore its potential as a nanolithography technique. Simulations have been undertaken to study the near field region behind conducting gratings.

Fig. 17.10. AFM images of a 270 nm period grating: (a) in photoresist following exposure and development (note it is only 45 nm thick), (b) in ARC and SiOx illustrating the improved profile following dry etching, (c) in 30 nm of NiCr following lift-off

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Brain Blaster

Brain Blaster

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