Nanojunction Rectifiers

The first nanowire-junction rectifier was demonstrated by Hu et al. [11]. Nanotube-silicon nanowire junction was synthesized by chemical vapor deposition and electrically connected to a Pt-Ir tip with silver paste at the nanotube end and to Ga-In liquid metal at the silicon nanowire end. I-V curves were measured with scanning tunneling microscope electronics.

The current-voltage measurements on NT/SiNW junctions with only the SiNW in contact with the Ga-In liquid exhibit reproducible rectifying behavior as shown in Figure 20. By doing several control experiments, Hu et al. concluded that the rectifying behavior is due to the metal-semiconductor Schottky barrier between NT and SiNW.

Electronic transport was also performed with Y-junction carbon nanotubes [179]. In order to make the measurement,

(b)

Figure 20. (a) Diagram of electrical measurement setup; a SEM image of NT/SiNW is shown. (b) I-V curve of two independent junctions. Reprinted with permission from [11], J. T. Hu et al., Nature 399, 48 (1999). © 1999, Macmillan Magazines Ltd.

Figure 20. (a) Diagram of electrical measurement setup; a SEM image of NT/SiNW is shown. (b) I-V curve of two independent junctions. Reprinted with permission from [11], J. T. Hu et al., Nature 399, 48 (1999). © 1999, Macmillan Magazines Ltd.

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