We have demonstrated here that clean and atomically ordered surfaces of compound semiconductors can be prepared in electrolyte solutions if the surface is properly treated. This fact should lead to the new development of semiconductor electrochemistry. The discovery of tip-induced etching and selective deposition of Cu on the modified portion should open the way to novel fabrication techniques.

Acknowledgement We are grateful to Dr. Chevy of Université Pierre et Marie Curie-Paris VI and Mr. H. Fujita of Mitsubishi Chemical Corporation for providing us with InSe and GaAs single crystals, respectively. This work was partially supported by Grant-in-Aids for Scientific Research (04555191) and for Priority Area Research (0545202, 0645202, 0745202, 06239204, 07239024) from the Ministry of Education, Science, Sports and Culture, Japan and by the Kato Science Foundation. M.K. acknowledges the Japan Society for the Promotion of Science for the JSPS Research Fellowships for Young Scientists.

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