The experiments described in this paper demonstrate the possibility of using SERS as a sensitive tool for in-situ monitoring and investigation of the electrocrystallization process of the active metals in parallel with other methods of investigation. The Raman signal can be followed to obtain information about the development of the real surface area and about the long-term stability of the growth conditions and the surface concentration of the molecular group followed by the SER signal. With a variation in the conditions for nucleus formation, more detailed results can be obtained reaching a molecular level in the analysis of metal-film formation. It is of special importance that the Raman method gives valuable complementary information if compared to methods giving geometric information, such as STM or X-ray diffraction. Therefore this method in combination with the new in-situ methods will reveal more details of the picture of the electrocrystallization process then microscopy alone.

Acknowledments. We appreciate the financial support of the Deutsche Forschungsgemeinschaft.

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